A
Novel Design and Simulation of a Compact and Ultra Fast CNTFET Multi-valued
Inverter Using HSPICE
Abstract
This paper presents a novel design of a
compact multi-valued inverter circuit using Carbon Nanotube Field effect
Transistor (CNTFET). All simulations are done by using HSPICE
model of CNTFET. The novelty of this paper is by using only one circuit all
multi-valued output can be achieved than using three different CNTFET circuits
or complex band-gap reference circuits to produce each reference voltage for
precise output in case of CMOS implementation which are previously done. Also
the same design implementation using MOSFETs with different threshold mask
would increase higher process cost. It is widely considered that CNTFET
possesses high fabrication feasibility and superior device performance than
MOSFET. The extensive simulated results and performance bench-marking of the proposed
design also show a significant reduction in power
delay product (PDP) which aids over 50% faster speed than typical multi-valued
inverter. Hence with this uniquely new design it is possible to accomplish
simplicity, energy efficiency and of course reducing the chip area in modern
ultra low power VLSI circuits.
Paper Link : http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6205527&contentType=Conference+Publications&ranges%3D2011_2012_p_Publication_Year%26matchBoolean%3Dtrue%26searchField%3DSearch_All%26queryText%3D%28%28%28VLSI%29+AND+Low+power%29+AND+hspice%29
Abstract
This paper presents a novel design of a
compact multi-valued inverter circuit using Carbon Nanotube Field effect
Transistor (CNTFET). All simulations are done by using HSPICE
model of CNTFET. The novelty of this paper is by using only one circuit all
multi-valued output can be achieved than using three different CNTFET circuits
or complex band-gap reference circuits to produce each reference voltage for
precise output in case of CMOS implementation which are previously done. Also
the same design implementation using MOSFETs with different threshold mask
would increase higher process cost. It is widely considered that CNTFET
possesses high fabrication feasibility and superior device performance than
MOSFET. The extensive simulated results and performance bench-marking of the proposed
design also show a significant reduction in power
delay product (PDP) which aids over 50% faster speed than typical multi-valued
inverter. Hence with this uniquely new design it is possible to accomplish
simplicity, energy efficiency and of course reducing the chip area in modern
ultra low power VLSI circuits.Paper Link : http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6205527&contentType=Conference+Publications&ranges%3D2011_2012_p_Publication_Year%26matchBoolean%3Dtrue%26searchField%3DSearch_All%26queryText%3D%28%28%28VLSI%29+AND+Low+power%29+AND+hspice%29
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